Research Article Open Access

Study of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor

G. M. Khanduri1 and B. S. Panwar1
  • 1 Center for Applied Research in Electronics, Indian Institute of Technology Delhi Hauz-Khas, New-Delhi-110016, India

Abstract

The cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT) at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT) having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority carrier electrons at the basecollector heterojunction of the DHBT structure. Whereas, the base-collector homojunction of the SiGe SHBT structure, having a uniform 14%Ge profile in its base and collector, inhibits the formation of such a retarding potential barrier. The SHBT structure with a base-collector homojunction shows an Improved cutoff frequency at a high collector current density in comparison with conventional SiGe DHBT, which makes it more promising for high speed, scaled down, field-specific applications.

American Journal of Applied Sciences
Volume 1 No. 3, 2004, 236-239

DOI: https://doi.org/10.3844/ajassp.2004.236.239

Submitted On: 2 May 2005 Published On: 30 September 2004

How to Cite: Khanduri, G. M. & Panwar, B. S. (2004). Study of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor. American Journal of Applied Sciences, 1(3), 236-239. https://doi.org/10.3844/ajassp.2004.236.239

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Keywords

  • Band Gap Narrowing
  • Drift Velocity
  • Mobile Communication
  • Valence Band Offset