Research Article Open Access

Residual Defects in Silicon Implanted with Boron and Phosphorous Ions

M. Jadan

Abstract

Accumulation of radiation defects in Si implanted with B+ or P+ ions, and formation of the residual extended defects (dislocation loops, rod-like defects) in the process of successive thermal treatment have been studied. The anomalies observed in the formation of the extended defects are associated with the elastic stresses in the damaged regions affecting the process of radiation defects clustering.

American Journal of Applied Sciences
Volume 2 No. 4, 2005, 877-880

DOI: https://doi.org/10.3844/ajassp.2005.877.880

Submitted On: 31 January 2005 Published On: 30 April 2005

How to Cite: Jadan, M. (2005). Residual Defects in Silicon Implanted with Boron and Phosphorous Ions. American Journal of Applied Sciences, 2(4), 877-880. https://doi.org/10.3844/ajassp.2005.877.880

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Keywords

  • Accumulation of radiation defects
  • residual
  • dislocation loops