Research Article Open Access

Modeling of Signal Generation Function and Electron Penetration Effects on the EBIC Signal of Schottky diodes of Ge

Beggah Yamina and Lahreche Abderezzek

Abstract

The present study shows that simple forms for the generation functions, if connected to appropriate electronic path (electron range), can be successfully used to describe the collection efficiency in EBIC devices. Both uniform and point-like source generation functions are considered here and for which two phenomenological electronic paths, depending on the incident beam energy, are obtained. Complexities that might arise solving the continuity equations are, thus, avoided. The calculations were performed for the Schottky diodes Au/Ge.

American Journal of Applied Sciences
Volume 5 No. 6, 2008, 678-682

DOI: https://doi.org/10.3844/ajassp.2008.678.682

Submitted On: 17 April 2007 Published On: 30 June 2008

How to Cite: Yamina, B. & Abderezzek, L. (2008). Modeling of Signal Generation Function and Electron Penetration Effects on the EBIC Signal of Schottky diodes of Ge . American Journal of Applied Sciences, 5(6), 678-682. https://doi.org/10.3844/ajassp.2008.678.682

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Keywords

  • Elecdtron beam induced current (EBIC)
  • generation function
  • electron penetration
  • schottky diodes of Ge