Research Article Open Access

Thermal-Mechanical Analysis of a Different Leadframe Thickness of Semiconductor Package under the Reflow Process

S. Abdullah, M. F. Abdullah, A. K. Ariffin and A. Jalar

Abstract

The copper-based leadframe is practically proven effective in the thermal and reliability of a Quad Flat No Lead (QFN) three dimension (3D) stacked-die semiconductor package. Reducing the copper thickness is understood to present various thermal and reliability failure mode and mechanisms, such as die cracking and delamination. However, no in-depth study has been pursued in order to determine the capability of achieving the product requirements in terms of thermal and reliability in a 3D stacked-die package. The drive towards a Die-Free Package Cost (DFPC) reduction has led the authors to study the used of a thin leadframe in a QFN 3D stacked-die. Hence, the work presents basis for the qualification of a thin leadframe design and also to demonstrate the thermal and reliability performance. Finally, an extensive virtual thermal-mechanical prototyping has to be achieved in order to understand the physics of materials during the assembly and reliability testing of a 3D stacked-die package with a thin leadframe. This design rule was found to be developed in order to prevent a die crack occurrence between die and leadframe in the semiconductor package.

American Journal of Applied Sciences
Volume 6 No. 4, 2009, 616-625

DOI: https://doi.org/10.3844/ajassp.2009.616.625

Submitted On: 12 June 2008 Published On: 30 April 2009

How to Cite: Abdullah, S., Abdullah, M. F., Ariffin, A. K. & Jalar, A. (2009). Thermal-Mechanical Analysis of a Different Leadframe Thickness of Semiconductor Package under the Reflow Process . American Journal of Applied Sciences, 6(4), 616-625. https://doi.org/10.3844/ajassp.2009.616.625

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Keywords

  • 3D Stacked-die
  • design
  • leadframe
  • QFN
  • stress
  • thermo-mechanical