Research Article Open Access

Stability Analysis of Solar Cell Characteristics Above Room Temperature Using Indium Nitride Based Quantum Dot

Mohd Abdur Rashid1, Adawati Yusuf1, Md. Abdullah Al Humayun1, Abdul Kareem Naser Mahmood Al-Khateeb1 and Shiro Tamaki2
  • 1 School of Electrical Systems Engineering, University Malaysia Perlis, Perlis, Malaysia
  • 2 Graduate School of Engineering and Science, Faculty of Engineering, University of the Ryukyus, Okinawa, Japan

Abstract

This study represents the improvement of stability of solar cell characteristics above room temperature. We have analyzed theoretically the temperature dependence of three major characteristics of solar cell using Ge and InN based quantum dot in the active layer of the device structure. Among the major characteristics of solar cell we have investigated the rate of change of open circuit voltage, short circuit current and the output power of solar cell with respect to temperature. Numerical results obtained are compared. The comparison results reveal that the rate of change of open circuit voltage, short circuit current and output power have been reduced significantly using InN based quantum dot in the active layer of the solar cell. Hence the improvement in stability of these characteristics above room temperature has been achieved by using InN based quantum dot in the active layer of the solar cell.

American Journal of Applied Sciences
Volume 10 No. 11, 2013, 1345-1350

DOI: https://doi.org/10.3844/ajassp.2013.1345.1350

Submitted On: 10 June 2013 Published On: 9 September 2013

How to Cite: Rashid, M. A., Yusuf, A., Humayun, M. A. A., Al-Khateeb, A. K. N. M. & Tamaki, S. (2013). Stability Analysis of Solar Cell Characteristics Above Room Temperature Using Indium Nitride Based Quantum Dot. American Journal of Applied Sciences, 10(11), 1345-1350. https://doi.org/10.3844/ajassp.2013.1345.1350

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Keywords

  • Quantum Dot
  • Solar Cell
  • Open Circuit Voltage
  • Short Circuit Current
  • Output Power