Research Article Open Access

CHARACTERISTIC ANALYSIS OF DUAL GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR BY MATHEMATICAL MODELING

C.A. Abdul Nazar1 and V. Kannan2
  • 1 M.G.R University, Chennai, India
  • 2 Jeppiaar Institute of Technology, Kunnam, India

Abstract

In this study, the characteristics of DGMOSFET were obtained using mathematical modeling. The variations of characteristics were analyzed with different conditions into consideration. Different parameters behavior is analyzed, such as Transcapacitance variation with the gate voltage, threshold voltage variation with respect to lateral straggle parameter and temperature, mobile charge density variation is also analyzed and also the drain characteristics of the DGMOSFET. The maximum drain current is obtained as 40 mA. The work is done using SPICE simulation software. The results obtained are in greater coherence with previous theoretical investigations.

American Journal of Applied Sciences
Volume 11 No. 8, 2014, 1193-1200

DOI: https://doi.org/10.3844/ajassp.2014.1193.1200

Submitted On: 19 March 2014 Published On: 5 May 2014

How to Cite: Nazar, C. A. & Kannan, V. (2014). CHARACTERISTIC ANALYSIS OF DUAL GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR BY MATHEMATICAL MODELING. American Journal of Applied Sciences, 11(8), 1193-1200. https://doi.org/10.3844/ajassp.2014.1193.1200

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Keywords

  • DGMOSFET
  • Drain Current
  • Transconductance