Research Article Open Access

Study of Au/n-Ti2S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation Modeling

Ali Ibrahim1
  • 1 Department of Physics, Faculty of Science, Tanta University, 31 527 Tanta, Egypt

Abstract

The Au/n-Ti2S/p-Si/Al heterojunction with intrinsic thin-layer solar cells were analyzed by AFORS-HET software program. Thickness of the emitter intrinsic layer and the interface state density of such cells were studied. In which, the intrinsic layer inserted between the Ti2S and crystalline p-type silicon substrate, reduce the interface state density. The thinner intrinsic layer is better than thicker one, when the interface state density is lower than 1010 cm-2.V-1. As the thickness of the emitter increased, both short-current density (J) and the conversion efficiency were decreased. The dependence of J-V characteristics of the Au/n-Ti2S/p-Si/Al heterojunction solar cell on Front and back Surface Recombination Velocity (SRV) was studied. By optimizing the initial parameters set, the Au/n-Ti2S/p-Si/Al solar cell reaches a high efficiency (η) up to 21.849% (FF: 0.834, Voc: 0.666 V, Jsc: 39.39 mA/cm2).

American Journal of Applied Sciences
Volume 12 No. 4, 2015, 262-271

DOI: https://doi.org/10.3844/ajassp.2015.262.271

Submitted On: 17 October 2014 Published On: 3 June 2015

How to Cite: Ibrahim, A. (2015). Study of Au/n-Ti2S/p-Si/Al Schottky-Type Thin Film Heterojunction Solar Cells: Computer Simulation Modeling. American Journal of Applied Sciences, 12(4), 262-271. https://doi.org/10.3844/ajassp.2015.262.271

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Keywords

  • AFORS-HET Software
  • Computer Simulation
  • Heterojunction Solar Cells
  • Intrinsic Emitter Layer Thickness
  • Interfaces States Density