Research Article Open Access

High Deposition Rate of Dual-cathode DC Unbalanced Magnetron Sputtering

Theeranon Chaiyakun1, Wuttichai Phae-Ngam2 and Jedsada Prathumsit2
  • 1 Industrial Electrical Technology Program, Faculty of Industrial Technology, Valaya Alongkorn Rajabhat University under the Royal Patronage, Pathumthani 13180, Thailand
  • 2 Physics Program, Faculty of Science and Technology, Phranakhon Rajabhat University, Bangkok 10220, Thailand


Dual-cathode dc unbalanced magnetron sputtering for the deposition of ternary compound films with a high deposition rate was designed and constructed. It consists of two magnetrons of opposite magnetic polarities. Each magnetron consists of central and outer ring magnets with the residual inductions of 500 and 600 mT, respectively. The testing results of the system showed that high plasma volume could be created at a long substrate distance of about 15 cm from the targets. In addition, by using this sputtering system for coating TiAlN film, the result showed that at a target to substrate distance of 13 cm the film growth rate was 7.3 nm/min. It indicates that the sputtering system developed in this study is suitable for large substrate area coating due to the long distance of target to substrate.

American Journal of Applied Sciences
Volume 17 No. 1, 2020, 231-239


Submitted On: 10 July 2020 Published On: 14 October 2020

How to Cite: Chaiyakun, T., Phae-Ngam, W. & Prathumsit, J. (2020). High Deposition Rate of Dual-cathode DC Unbalanced Magnetron Sputtering. American Journal of Applied Sciences, 17(1), 231-239.

  • 4 Citations



  • Unbalanced Magnetron
  • DC Magnetron Sputtering
  • Dual Cathode