Research Article Open Access

Performance Enhancement Strategy of Ultra-Thin CIGS Solar Cells

Soumaïla Ouédraogo1, Boureima Traoré1, Marcel Bawindsom Kébré1, Daouda Oubda1, Adama Zongo1, Issiaka Sankara1 and François Zougmoré1
  • 1 Département de Physique, Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA, Université Joseph Ki-ZERBO, Ouagadougou, Burkina Faso


In this article, numerical modeling and simulation using SCAPS-1D software has been used to explore the performance of CIGS-based solar cells when some parameters are modified. Starting from a baseline model that rigorously reproduces the experimental results, the absorber properties such as defect density, band-gap and acceptor concentration have been investigated and the optimal values to obtain high-efficiency CIGS-base solar cells have been proposed. The optimal parameters obtained are used to develop a new ultra-thin CIGS cell architecture. The results suggest that the use of 1000 nm Electron Back Reflector (EBR) layer with 1.3 eV band-gap at the CIGS/Mo interface provides higher electrical parameters than standard cells and materials such as MoS2, AgO, SnS, Cu2Te, CdSnP2, CuIn5S8, PbCuSbS3 can be successful EBR in ultra-thin CIGS solar cells. This optimized structure provides a serious pathway toward the development of ultra-thin cells with performance close to the best CIGS cells with standard thicknesses.

American Journal of Applied Sciences
Volume 17 No. 1, 2020, 246-255


Submitted On: 16 October 2020 Published On: 24 December 2020

How to Cite: Ouédraogo, S., Traoré, B., Kébré, M. B., Oubda, D., Zongo, A., Sankara, I. & Zougmoré, F. (2020). Performance Enhancement Strategy of Ultra-Thin CIGS Solar Cells. American Journal of Applied Sciences, 17(1), 246-255.

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  • Cu(In, Ga)Se2
  • Band-Gap
  • Defect Density
  • Electron Reflector