@article {10.3844/ajassp.2007.19.22,
article_type = {journal},
title = {Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping},
author = {Ben Sedrine, N. and Hamdouni, A. and Rihani, J. and Ben Bouzid, S. and Bousbih, F. and Harmand, J.C. and Chtourou, R.},
volume = {4},
year = {2007},
month = {Apr},
pages = {19-22},
doi = {10.3844/ajassp.2007.19.22},
url = {https://thescipub.com/abstract/ajassp.2007.19.22},
abstract = {The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which intensity decreases by increasing silicon content. This wide band was attributed to the presence of deep localized states induced by a three-dimensional growth of the GaAsN layer. In addition, these deep localized states are annihilated by the free carriers from silicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify the band gap energy of GaAs1-xNx structure. The decrease of the activation energies with increasing silicon content was observed.},
journal = {American Journal of Applied Sciences},
publisher = {Science Publications}
}