TY  - JOUR
AU  - Ben Sedrine, N. 
AU  - Hamdouni, A. 
AU  - Rihani, J. 
AU  - Ben Bouzid, S. 
AU  - Bousbih, F. 
AU  - Harmand, J.C. 
AU  - Chtourou, R. 
PY  - 2007
TI  - Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping
JF  - American Journal of Applied Sciences
VL  - 4
IS  - 1
DO  - 10.3844/ajassp.2007.19.22
UR  - https://thescipub.com/abstract/ajassp.2007.19.22
AB  - The photoluminescence (PL) properties of Si-doped GaAs0.985N0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which intensity decreases by increasing silicon content. This wide band was attributed to the presence of deep localized states induced by a three-dimensional growth of the GaAsN layer. In addition, these deep localized states are annihilated by the free carriers from silicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify the band gap energy of GaAs1-xNx structure. The decrease of the activation energies with increasing silicon content was observed.