@article {10.3844/ajassp.2016.1394.1399,
article_type = {journal},
title = {Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties},
author = {Marwoto, Putut and Wibowo, Edy and Suprayogi, Dwi and Sulhadi, Sulhadi and Aryanto, Didik and Sugianto, Sugianto},
volume = {13},
year = {2016},
month = {Dec},
pages = {1394-1399},
doi = {10.3844/ajassp.2016.1394.1399},
url = {https://thescipub.com/abstract/ajassp.2016.1394.1399},
abstract = {ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.},
journal = {American Journal of Applied Sciences},
publisher = {Science Publications}
}