@article {10.3844/pisp.2010.110.114,
article_type = {journal},
title = {Study of Electronic Properties of Metal-Insulator-Metal Structures for Fabrication of Cold Cathodes},
author = {Ghaforyan, Hossein and Ebrahimzadeh, Majid},
volume = {1},
year = {2011},
month = {Aug},
pages = {110-114},
doi = {10.3844/pisp.2010.110.114},
url = {https://thescipub.com/abstract/pisp.2010.110.114},
abstract = {Problem statement: The electrical properties of thin film structures consisting of metalinsulator- metal sandwiches are important in electronic devices. Approach: The electrical properties of thin film structures consisting of metal-insulator-metal sandwiches are investigated in this experimental work. Results: We are discussed of the electroformed metal-insulator-metal structures Au-MgF2-Au and comparison with other Au-SiO/CeF3-Au, Cu-CeF3-Cu, Cu-SiO-Cu, Au-CeF3-Au specimens. There explains various properties including electron emission, electroluminescence, memory effects and, the differential negative resistance. The article is based upon experiments which identify the conduction process to be trap-controlled thermally activated tunneling between metal islands produced in the forming process. These devices undergo an electroforming process leading to resistivity decrease of several orders of magnitude along with a negative resistance region in their I-V characteristics. Conclusion/Recommendations: Experimental results show that Cu-SiO-Cu and Au- MgF2-Au Mg specimens have high circulating current at room temperature and can be implication for the production of commercial electroformed devices such as cold cathode.},
journal = {Physics International},
publisher = {Science Publications}
}