Research Article Open Access

Low-g Area-changed MEMS Accelerometer Using Bulk Silicon Technique

Badariah Bais and Burhanuddin Yeop Majlis


A bulk micromachined accelerometer based on an area variation capacitive sensing for low-g applications was developed. The accelerometer was designed with ribbed-style fingers structure on the movable mass connected in parallel and suspended over stationary electrodes composed of differential comb fingers by means of suspension beams anchored onto the substrate. A folded, rigid truss suspension design with low spring constant and low cross-axis sensitivity was chosen. The simulation was performed using Coventorware software. A three-mask bulk micromachining wafer bonding fabrication process was utilized to realize the accelerometer. Silicon-on-glass was used to achieve high sensitivity and low mechanical noise while maintaining a simple structure. The general concept, main design considerations, fabrication procedure and performance of the resulted accelerometer was elaborated and presented. A linear relationship between the differential capacitance and acceleration was obtained. The accelerometer sensitivity was calculated to be 0.47 pF/g with an acceleration range of ±5 g.

American Journal of Applied Sciences
Volume 5 No. 6, 2008, 626-632


Submitted On: 16 October 2007 Published On: 30 June 2008

How to Cite: Bais, B. & Majlis, B. Y. (2008). Low-g Area-changed MEMS Accelerometer Using Bulk Silicon Technique. American Journal of Applied Sciences, 5(6), 626-632.

  • 12 Citations



  • MEMS
  • area-changed
  • accelerometer
  • capacitive
  • bulk micromachined