Research Article Open Access

Ultra Low Power Single Edge Triggered Delay Flip Flop Based Shift Registers Using 10-Nanometer Carbon Nano Tube Field Effect Transistor

Ravi Thiyagarajan1 and Kannan Veerappan2
  • 1 Faculty of Electronics Engineering, Sathyabama University, Chennai, Tamilnadu, India
  • 2 Jeppiaar Institute of Technology, Kunnam, Tamilnadu, India

Abstract

Carbon Nano Tube Field Effect Transistor is currently considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. The scaling down of the Metal Oxide Semiconductor device faced serious limits like short channel effect, tunnelling through gate oxide layer, associated leakage currents and power dissipation when its dimension shrink down to 22 nanometer range. Further scaling of Metal Oxide Semiconductor Field Effect Transistor will result in performance degradation. In this study, an ultra low power Single Edge Triggered Delay Flip Flop and shift registers are designed using 10 nanometre Carbon Nano Tube Field Effect Transistor. The Carbon Nano Tube Field Effect Transistor is an efficient device to supplant the current Complementary Metal Oxide Semiconductor technology for its excellent electrical properties. The high electron and hole mobility of semiconductor nano tubes, their compatibility with high k gate dielectrics, enhanced electrostatics, reduced short channel effects and ability to readily form metal ohmic contacts make these miniaturized structures an ideal material for high performance, nanoscale transistors. To evaluate the performance of Ultra low power Single Edge Triggered Delay Flip Flop and shift registers using 10 nanometer Carbon Nano Tube Field Effect Transistor technology, the results are depicted by analyzing average power, delay, power delay product, rise time and fall time using HSPICE at 1GHz operating frequency.

American Journal of Applied Sciences
Volume 10 No. 12, 2013, 1509-1520

DOI: https://doi.org/10.3844/ajassp.2013.1509.1520

Submitted On: 14 August 2013 Published On: 14 October 2013

How to Cite: Thiyagarajan, R. & Veerappan, K. (2013). Ultra Low Power Single Edge Triggered Delay Flip Flop Based Shift Registers Using 10-Nanometer Carbon Nano Tube Field Effect Transistor. American Journal of Applied Sciences, 10(12), 1509-1520. https://doi.org/10.3844/ajassp.2013.1509.1520

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Keywords

  • Carbon Nano Tube Field Effect Transistor
  • Single Edge Triggered Delay Flip Flop
  • Shift Registers
  • Power
  • Power Delay Product
  • Rise Time
  • Fall Time