Properties of ZnO:Ga Thin Films Deposited by dc Magnetron Sputtering: Influence of Ga-Doped Concentrations on Structural and Optical Properties
- 1 Material Research Group, Department of Physics, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang (Unnes), Gunungpati Semarang 50229, Indonesia
- 2 Engineering Physics, School of Electrical Engineering, Telkom University, Jalan Telekomunikasi No.1, Terusan Buah Batu, Bandung 40257, Indonesia
- 3 Physics Research Centre, Indonesia Academy of Science, Puspitek, Serpong 15314, Indonesia
ZnO:Ga thin films were deposited on corning glass by dc magnetron sputtering. Influence of Ga-doped concentrations on the structural and optical properties of ZnO:Ga thin films were investigated. The XRD patterns show that the crystallinity of deposited films improved with the increase of Ga concentrations from 1 to 2%, then decrease at 3% Ga concentrations. The optical transmittance of films with 1% and 2% Ga concentration reach 85% in the visible range, while at 3% Ga concentration the transmittance of film only 70%. We observed that the band gap of film change due to the addition of Ga dopant. The band gap of the films are 3.27, 3.28 and 3.21 eV for 1, 2 and 3% Ga-doped concentrations, respectively.
Copyright: © 2016 Putut Marwoto, Edy Wibowo, Dwi Suprayogi, Sulhadi Sulhadi, Didik Aryanto and Sugianto Sugianto. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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- ZnO:Ga Thin Films
- DC Magnetron Sputtering
- Optical Properties