Research Article Open Access

Design of a Current Sensor for IDDQ Testing of CMOS IC

Mohd Liakot Ali and Nurul Huda Khamis

Abstract

This study presents the design of an off-chip current sensor for IDDQ testing of CMOS (Complementary Metal-oxide Semiconductor) ICs (integrated circuit). It provides a linear voltage signal of IDDQ current with a conversion factor of 5 mV/μA without any amplification. A voltage-controlled switch is used to bypass the transient current peaks. It has also been shown that the sensor is capable of detecting IDDQ faults of a circuit at 100 kHz test frequency without degrading its performance.

American Journal of Applied Sciences
Volume 2 No. 3, 2005, 682-687

DOI: https://doi.org/10.3844/ajassp.2005.682.687

Submitted On: 14 November 2005 Published On: 31 March 2005

How to Cite: Ali, M. L. & Khamis, N. H. (2005). Design of a Current Sensor for IDDQ Testing of CMOS IC. American Journal of Applied Sciences, 2(3), 682-687. https://doi.org/10.3844/ajassp.2005.682.687

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Keywords

  • IDDQ Testing
  • CMOS IC
  • Current Sensor